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Design and fabrication of SiGe MEMS structures with high intrinsic ESD robustness.
- Source :
- 2012 IEEE International Reliability Physics Symposium (IRPS); 1/ 1/2012, p3-3E.4.6, 0p
- Publication Year :
- 2012
-
Abstract
- The mechanical response of electrostatically-actuated MEMS to ESD stress leads to contact breakdown or to discharges across micro-gaps. This is the root cause of most MEMS failures under ESD stress. This paper discusses improvement of the intrinsic ESD robustness of SiGe MEMS from Class0 (<250V) to more than Class1 (>500V), through smart design variations and higher mechanical stiffness. A MEMS-based one-time ESD-protection fuse with pre-defined trigger voltage is shown as an application. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISBNs :
- 9781457716782
- Database :
- Complementary Index
- Journal :
- 2012 IEEE International Reliability Physics Symposium (IRPS)
- Publication Type :
- Conference
- Accession number :
- 87044753
- Full Text :
- https://doi.org/10.1109/IRPS.2012.6241822