Insight into the multicomponent nature of negative bias temperature instability.

A novel measurement technique is used to extract two physically distinct 'permanent' (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal-oxide-semiconductor field effect transistors under inversion and n-channel devices under accumulation. The results suggest that the permanent components are present in both cases, while there is little, if any, recoverable charge present in the case of the n-channel device. A physical explanation is provided involving the band energy diagram to explain these observations. [ABSTRACT FROM AUTHOR]