Temperature and electric field stabilities of dielectric and insulating properties for c-axis-oriented CaBi4Ti4O15 films.

Temperature and electric field dependencies of the dielectric and insulating properties of (001)-oriented epitaxial CaBi4Ti4O15 films grown on (100)cSrRuO3//(100)SrTiO3 substrates were investigated and compared with those of conventional (100)-oriented epitaxial (Ba0.3Sr0.7)TiO3 and SrTiO3 films. All films showed negative temperature dependency of the capacitance from 25 to 500 °C, and their changes were -18%, -83%, and -58% for CaBi4Ti4O15, (Ba0.3Sr0.7)TiO3, and SrTiO3 films, respectively. Smaller change of the capacitance against dc electric field was also observed for CaBi4Ti4O15 films. Moreover, the maximum leakage current density of CaBi4Ti4O15 films measured at ±100 kV/cm was below 10-3 A/cm2 up to 500 °C, which was smaller than those of (Ba0.3Sr0.7)TiO3 and SrTiO3 films. These results indicate that (001)-oriented CaBi4Ti4O15 films are a useful candidate as the capacitor material applicable for the high temperature use because of its high stability against temperature and an electric field as well as the good insulating characteristics. [ABSTRACT FROM AUTHOR]