Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide.

MLA

Towner, A. C., et al. “Positron Annihilation Study of the Diffusion of Oxygen in Annealed Silicon-Doped Gallium Arsenide.” Philosophical Magazine B, vol. 82, no. 17, Nov. 2002, pp. 1809–15. EBSCOhost, https://doi.org/10.1080/13642810208222942.

APA

Towner, A. C., Nathwani, M., Saleh, A. S., van der Werf, D. P., & Rice-Evans, P. (2002). Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide. Philosophical Magazine B, 82(17), 1809–1815. https://doi.org/10.1080/13642810208222942

Chicago

Towner, A. C., M. Nathwani, A. S. Saleh, D. P. van der Werf, and P. Rice-Evans. 2002. “Positron Annihilation Study of the Diffusion of Oxygen in Annealed Silicon-Doped Gallium Arsenide.” Philosophical Magazine B 82 (17): 1809–15. doi:10.1080/13642810208222942.