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The design optimization and variation study of segmented-channel MOSFET using HfO2 or SiO2 trench isolation.
- Source :
- 2013 International Symposium on VLSI Technology, Systems & Application (VLSI-TSA); 2013, p1-2, 2p
- Publication Year :
- 2013
Details
- Language :
- English
- ISBNs :
- 9781467330817
- Database :
- Complementary Index
- Journal :
- 2013 International Symposium on VLSI Technology, Systems & Application (VLSI-TSA)
- Publication Type :
- Conference
- Accession number :
- 89785763
- Full Text :
- https://doi.org/10.1109/VLSI-TSA.2013.6545600