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Thin-film polycrystalline silicon solar cells formed by diode laser crystallisation.
- Source :
- Progress in Photovoltaics; Sep2013, Vol. 21 Issue 6, p1377-1383, 7p
- Publication Year :
- 2013
-
Abstract
- ABSTRACT Polycrystalline silicon films of 10 μm thickness are formed on glass in a single-step continuous wave diode laser crystallisation process, creating large crystal grains up to 1 mm wide and 10 mm long. Solar cells are formed on the layers by employing a rear point contacting scheme. Intermediate layers between the glass and the silicon are shown to heavily influence the cell characteristics. A stack of silicon oxide/silicon nitride/silicon oxide has produced the best cell efficiency so far of 8.4 % with open-circuit voltage of 557 mV. With simple optimisation of the contacting scheme, 10 % efficient cells are expected in the near future. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10627995
- Volume :
- 21
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Progress in Photovoltaics
- Publication Type :
- Academic Journal
- Accession number :
- 89865450
- Full Text :
- https://doi.org/10.1002/pip.2282