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Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability.
- Source :
- IEEE Transactions on Electron Devices; Sep2013, Vol. 60 Issue 9, p2802-2807, 6p
- Publication Year :
- 2013
-
Abstract
- This paper extends the analysis of the companion paper by presenting a comparative analysis of the impact of interface traps on the I-V characteristics of InAs nanowire tunnel FETs or MOSFETs with a spatially random distribution of traps. The physical mechanisms behind the effects of traps in either tunnel FETs or MOSFETs are compared and, furthermore, traps are also investigated as a possible source of device variability. Our results show that, in MOSFETs, an aggressive oxide thickness scaling can effectively counteract the degradation of the subthreshold slope (SS) possibly produced by interface traps. Tunnel FETs are instead more vulnerable to traps, which are probably the main hindrance to the experimental realization of tunnel FETs with an SS better than 60 mV/decade. [ABSTRACT FROM AUTHOR]
- Subjects :
- FIELD-effect transistors
NANOWIRES
QUANTUM tunneling
COMPARATIVE studies
ELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 89927270
- Full Text :
- https://doi.org/10.1109/TED.2013.2274197