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Oscillation of coercivity between positive and negative in MnxGe1-x:H ferromagnetic semiconductor films.
- Source :
- Chinese Physics B; 2013, Vol. 22 Issue 5, p1-5, 5p
- Publication Year :
- 2013
-
Abstract
- Amorphous Mn<subscript>x</subscript>Ge<subscript>1-x</subscript>: H ferromagnetic semiconductor films prepared in mixed Ar with 20% H<subscript>2</subscript> by magnetron co-sputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of Mn<subscript>x</subscript>Ge<subscript>1-x</subscript>:H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding Mn<subscript>x</subscript>Ge<subscript>1-x</subscript> and other ferromagnetic semiconductors before. For Mn<subscript>0.4</subscript>Ge<subscript>0.6</subscript>:H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of Mn<subscript>x</subscript>Ge<subscript>1-x</subscript> films for the application in spintronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 22
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 90224909
- Full Text :
- https://doi.org/10.1088/1674-1056/22/5/057503