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History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination.
- Source :
- Proceedings of the IEEE; Oct2013, Vol. 101 Issue 10, p2211-2220, 10p
- Publication Year :
- 2013
-
Abstract
- The history of development for gallium–nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which has led to native bulk-GaN-based LEDs with unprecedented performance characteristics that portend a disruptive shift in LED output power density and the corresponding cost of generating light. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189219
- Volume :
- 101
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Proceedings of the IEEE
- Publication Type :
- Academic Journal
- Accession number :
- 90364580
- Full Text :
- https://doi.org/10.1109/JPROC.2013.2274929