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Optical characterization of individual GaAs quantum dots grown with height control technique.
- Source :
- Journal of Applied Physics; Sep2013, Vol. 114 Issue 12, p124301, 4p
- Publication Year :
- 2013
-
Abstract
- We show that the epitaxial growth of height-controlled GaAs quantum dots, leading to the reduction of the inhomogeneous emission bandwidth, produces individual nanostructures of peculiar morphology. Besides the height controlled quantum dots, we observe nanodisks formation. Exploiting time resolved and spatially resolved photoluminescence we establish the decoupling between quantum dots and nanodisks and demonstrate the high optical properties of the individual quantum dots, despite the processing steps needed for height control. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 114
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 90481715
- Full Text :
- https://doi.org/10.1063/1.4821901