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A Thermally Stable and High-Performance 90-nm Al2O3\backslashCu-Based 1T1R CBRAM Cell.
- Source :
- IEEE Transactions on Electron Devices; Nov2013, Vol. 60 Issue 11, p3690-3695, 6p
- Publication Year :
- 2013
-
Abstract
- In this paper, we optimize the stack of a 90-nm CMOS-friendly W\backslashAl2O3\backslashCu conductive-bridging random access memory cell integrated in the one-transistor/one-resistor configuration. We show that the excellent Cu buffering properties of a TiW layer inserted at the Al2O3\backslashCu interface make it possible, on one hand, to ensure cell integrity after back-end-of-line processing at 400^\circC and, on the other, to obtain excellent memory performances. After optimization of the Al2O3 layer thickness, the cell exhibits highly controlled set and reset operations, a large memory window, fast pulse programming (10 ns) at low voltage (<3~V), and low-current (10 \muA), and multilevel operation. Finally, 10^6 cycles of write endurance lifetime with up to a three-decade memory window is demonstrated, and state stability is assessed up to 125^\circC. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 91553901
- Full Text :
- https://doi.org/10.1109/TED.2013.2282000