MIM Capacitors Based on ZrTiOx/\rm BaZry\rm Ti1-y\rm O3 Featuring Record-Low VCC and Excellent Reliability.

Perovskite-based BaZry\rm Ti1-y\rm O3 (BZTO) (y=0.6) with partial crystallization has been found to possess a rather high-\kappa value of 48.6 and positive quadratic voltage coefficient of capacitance (VCC). Through stacking BZTO and ZrTiOx as laminate dielectric, metal–insulator–metal capacitors using VCC canceling effect advance frontiers by exhibiting a record-low VCC of 14 ppm/V^2 at the capacitance of 13.4 fF/\mum^2, low dielectric loss tangent <0.01, and low leakage current of 7.5\times 10^-9~A/cm^2 at -1~V. With constant voltage stress at 2.5 V for 1000 s, degradation in leakage current <30\% is observed. In addition, excellent reliability of 0.89% capacitance change against stress up to a projected of 10 years is also achieved. The aforementioned characteristics not only compare favorably to other high-\kappa-based dielectrics, most importantly, but also these results meet ITRS requirements set by 2024. [ABSTRACT FROM AUTHOR]