Cite
A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT).
MLA
Wen-Chau Liu, et al. “A New Functional AlGaAs/InGaAs/GaAs Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT).” 1996 Conference on Optoelectronic & Microelectronic Materials & Devices Proceedings, Jan. 1997, pp. 247–50. EBSCOhost, https://doi.org/10.1109/COMMAD.1996.610117.
APA
Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, Chen, H. R., Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, & Jing-Yuh Chen. (1997). A new functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT). 1996 Conference on Optoelectronic & Microelectronic Materials & Devices Proceedings, 247–250. https://doi.org/10.1109/COMMAD.1996.610117
Chicago
Wen-Chau Liu, Jung-Hui Tsai, Lih-Wen Laih, H.R. Chen, Shiou-Ying Cheng, Wei-Chou Wang, Po-Hung Lin, and Jing-Yuh Chen. 1997. “A New Functional AlGaAs/InGaAs/GaAs Heterostructure-Emitter and Heterostructure-Base Transistor (HEHBT).” 1996 Conference on Optoelectronic & Microelectronic Materials & Devices Proceedings, January, 247–50. doi:10.1109/COMMAD.1996.610117.