Cite
MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics.
MLA
Song, S. C., et al. “MOSFET Characteristics of Ultra Thin CVD Si3N4 Gate Dielectrics.” 28th European Solid-State Device Research Conference, Jan. 1998, pp. 232–35. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=92145363&authtype=sso&custid=ns315887.
APA
Song, S. C., Luan, H. F., Chen, Y. Y., Kwong, D. L., Gardener, M., Fulford, J., & Allen, M. (1998). MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics. 28th European Solid-State Device Research Conference, 232–235.
Chicago
Song, S.C., H.F. Luan, Y.Y. Chen, D.L. Kwong, M. Gardener, J. Fulford, and M. Allen. 1998. “MOSFET Characteristics of Ultra Thin CVD Si3N4 Gate Dielectrics.” 28th European Solid-State Device Research Conference, January, 232–35. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=92145363&authtype=sso&custid=ns315887.