Direct measurement of localized joule heating in silicon devices by means of newly developed high resolution IR microscopy.

Details

Language :

English

ISBNs :

9780879426804

Database :

Complementary Index

Journal :

29th Annual Proceedings Reliability Physics 1991

Publication Type :

Conference

Accession number :

92145605

Full Text :

https://doi.org/10.1109/RELPHY.1991.146022