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High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels.

Authors :
Josse, E.
Skotnicki, T.
Regolini, J.L.
Grouillet, A.
Papadas, C.
Source :
29th European Solid-State Device Research Conference; 1999, Issue 1, p568-571, 4p
Publication Year :
1999

Details

Language :
English
ISBNs :
9782863322451
Issue :
1
Database :
Complementary Index
Journal :
29th European Solid-State Device Research Conference
Publication Type :
Conference
Accession number :
92145818

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