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Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability.

Authors :
Henderson, T.
Ley, V.
Kim, T.
Moise, T.
Hill, D.
Source :
International Electron Devices Meeting Technical Digest; 1996, p203-206, 4p
Publication Year :
1996

Details

Language :
English
ISBNs :
9780780333932
Database :
Complementary Index
Journal :
International Electron Devices Meeting Technical Digest
Publication Type :
Conference
Accession number :
92188335
Full Text :
https://doi.org/10.1109/IEDM.1996.553568