Nitride cladded poly-Si spacer LOCOS (NCPSL) isolation technology for the 1 giga bit DRAM.

Details

Language :

English

ISBNs :

9780780333932

Database :

Complementary Index

Journal :

International Electron Devices Meeting Technical Digest

Publication Type :

Conference

Accession number :

92188475

Full Text :

https://doi.org/10.1109/IEDM.1996.554106