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Novel Ga/sub 0.47/In/sub 0.53/As metal-semiconductor-metal photodetectors grown by metalorganic vapor phase epitaxy.
- Source :
- Proceedings 1996 IEEE Hong Kong Electron Devices Meeting; 1996, p56-59, 4p
- Publication Year :
- 1996
Details
- Language :
- English
- ISBNs :
- 9780780330917
- Database :
- Complementary Index
- Journal :
- Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 92223648
- Full Text :
- https://doi.org/10.1109/HKEDM.1996.566309