Effect of n-GaAs surface preparation and RF power on the electrical characteristics of W/n-GaAs Schottky diode fabricated by RF sputtering.

Details

Language :

English

ISBNs :

9780780330627

Database :

Complementary Index

Journal :

Proceedings of 4th International Conference on Solid-State & IC Technology

Publication Type :

Conference

Accession number :

92287730

Full Text :

https://doi.org/10.1109/ICSICT.1995.500173