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Turn-off failure mechanisms in large (2.2 kV, 20 A) MCT devices.

Authors :
Lendenmann, H.
Fichtner, W.
Source :
Proceedings of the 6th International Symposium on Power Semiconductor Devices & Ics; 1994, p207-212, 6p
Publication Year :
1994

Details

Language :
English
ISBNs :
9780780314948
Database :
Complementary Index
Journal :
Proceedings of the 6th International Symposium on Power Semiconductor Devices & Ics
Publication Type :
Conference
Accession number :
92312157
Full Text :
https://doi.org/10.1109/ISPSD.1994.583724