A computationally stable quasi-empirical compact model for the simulation of MOS breakdown in ESD-protection circuit design.

Details

Language :

English

ISBNs :

9780780337756

Database :

Complementary Index

Journal :

SISPAD '97 1997 International Conference on Simulation of Semiconductor Processes & Devices Technical Digest

Publication Type :

Conference

Accession number :

92350586

Full Text :

https://doi.org/10.1109/SISPAD.1997.621362