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Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of Long Wave-length InfraRed (LWIR) detectors.

Authors :
Jain, S.C.
Poortmans, J.
Nijs, J.
Van Mieghem, P.
Mertens, R.P.
Van Overstraeten, R.
Source :
ESSDERC '92: 22nd European Solid State Device Research conference; 1992, p439-442, 4p
Publication Year :
1992

Details

Language :
English
ISBNs :
9780444894786
Database :
Complementary Index
Journal :
ESSDERC '92: 22nd European Solid State Device Research conference
Publication Type :
Conference
Accession number :
92389160

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