A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems.

Details

Language :

English

ISBNs :

9780780335042

Database :

Complementary Index

Journal :

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996

Publication Type :

Conference

Accession number :

92471763

Full Text :

https://doi.org/10.1109/GAAS.1996.567879