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A new InGaP-GaAs double delta-doped heterojunction bipolar transistor (D/sup 3/HBT).
- Source :
- ICMMT'98 1998 International Conference on Microwave & Millimeter Wave Technology Proceedings (Cat No98EX106); 1998, p100-103, 4p
- Publication Year :
- 1998
Details
- Language :
- English
- ISBNs :
- 9780780343085
- Database :
- Complementary Index
- Journal :
- ICMMT'98 1998 International Conference on Microwave & Millimeter Wave Technology Proceedings (Cat No98EX106)
- Publication Type :
- Conference
- Accession number :
- 92473484
- Full Text :
- https://doi.org/10.1109/ICMMT.1998.768236