Identification of MOS oxide defect location with a spatial resolution less than 0.1 /spl mu/m using photoemission microscope.

Details

Language :

English

ISBNs :

9780780352704

Database :

Complementary Index

Journal :

ICMTS 1999 Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat No99CH36307)

Publication Type :

Conference

Accession number :

92473791

Full Text :

https://doi.org/10.1109/ICMTS.1999.766222