A 0.4- mu m gate-length AlGaAs/GaAs P-channel HIGFET with 127-mS/mm transconductance at 77 K.

Details

Language :

English

ISSN :

07413106

Volume :

11

Issue :

7

Database :

Complementary Index

Journal :

IEEE Electron Device Letters

Publication Type :

Academic Journal

Accession number :

92795008

Full Text :

https://doi.org/10.1109/55.56475