High-frequency InP/InGaAs double heterojunction bipolar transistors on Si substrate.

Details

Language :

English

ISSN :

07413106

Volume :

14

Issue :

7

Database :

Complementary Index

Journal :

IEEE Electron Device Letters

Publication Type :

Academic Journal

Accession number :

92795652

Full Text :

https://doi.org/10.1109/55.225572