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0.12-μm gate III-V nitride HFET's with high contact resistances.
- Source :
- IEEE Electron Device Letters; 1997, Vol. 18 Issue 4, p141-143, 3p
- Publication Year :
- 1997
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 18
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 92796580
- Full Text :
- https://doi.org/10.1109/55.563309