Cite
Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress.
MLA
Kurishima, K., et al. “Initial Degradation of Base-Emitter Junction in Carbon-Doped InP/InGaAs HBTs under Bias and Temperature Stress.” IEEE Electron Device Letters, vol. 19, no. 8, Jan. 1998, pp. 303–05. EBSCOhost, https://doi.org/10.1109/55.704407.
APA
Kurishima, K., Yamahata, S., Nakajima, H., Ito, H., & Watanabe, N. (1998). Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress. IEEE Electron Device Letters, 19(8), 303–305. https://doi.org/10.1109/55.704407
Chicago
Kurishima, K., S. Yamahata, H. Nakajima, H. Ito, and N. Watanabe. 1998. “Initial Degradation of Base-Emitter Junction in Carbon-Doped InP/InGaAs HBTs under Bias and Temperature Stress.” IEEE Electron Device Letters 19 (8): 303–5. doi:10.1109/55.704407.