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Fault-tolerant designs for 256 Mb DRAM.
- Source :
- IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 4, p558-566, 9p
- Publication Year :
- 1996
Details
- Language :
- English
- ISSN :
- 00189200
- Volume :
- 31
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Journal of Solid-State Circuits
- Publication Type :
- Academic Journal
- Accession number :
- 92814569
- Full Text :
- https://doi.org/10.1109/4.499733