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Fault-tolerant designs for 256 Mb DRAM.

Authors :
Kirihata, T.
Watanabe, Y.
Hing Wong
DeBrosse, J.K.
Yoshida, M.
Kato, D.
Fujii, S.
Wordeman, M.R.
Poechmueller, P.
Parke, S.A.
Asao, Y.
Source :
IEEE Journal of Solid-State Circuits; 1996, Vol. 31 Issue 4, p558-566, 9p
Publication Year :
1996

Details

Language :
English
ISSN :
00189200
Volume :
31
Issue :
4
Database :
Complementary Index
Journal :
IEEE Journal of Solid-State Circuits
Publication Type :
Academic Journal
Accession number :
92814569
Full Text :
https://doi.org/10.1109/4.499733