Efficiency enhancement in InGaN/GaN light-emitting diodes by decreasing the thickness of last barrier.

Details

Language :

English

ISBNs :

9781467363099

Database :

Complementary Index

Journal :

2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

Publication Type :

Conference

Accession number :

92917699

Full Text :

https://doi.org/10.1109/NUSOD.2013.6633118