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Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation.
- Source :
- 2013 IEEE International Conference of Electron Devices & Solid-state Circuits; 2013, p1-2, 2p
- Publication Year :
- 2013
Details
- Language :
- English
- ISBNs :
- 9781467325233
- Database :
- Complementary Index
- Journal :
- 2013 IEEE International Conference of Electron Devices & Solid-state Circuits
- Publication Type :
- Conference
- Accession number :
- 92928162
- Full Text :
- https://doi.org/10.1109/EDSSC.2013.6628128