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Highly reliable high-voltage transistors by use of the SIPOS process.
- Source :
- IEEE Transactions on Electron Devices; 1976, Vol. 23 Issue 8, p826-830, 5p
- Publication Year :
- 1976
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 23
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93111664
- Full Text :
- https://doi.org/10.1109/T-ED.1976.18494