Back to Search
Start Over
Experimental 0.25-/spl mu/m-gate fully depleted CMOS/SIMOX process using a new two-step LOCOS isolation technique.
- Source :
- IEEE Transactions on Electron Devices; 1995, Vol. 42 Issue 8, p1481-1486, 6p
- Publication Year :
- 1995
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 42
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93119857
- Full Text :
- https://doi.org/10.1109/16.398663