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HfO2 Based High-k Inter-Gate Dielectrics for Planar NAND Flash Memory.
- Source :
- IEEE Electron Device Letters; Jan2014, Vol. 35 Issue 1, p45-47, 3p
- Publication Year :
- 2014
-
Abstract
- We investigate the use of HfO2 based high-k materials as inter-gate dielectric in hybrid floating gate based memory cells for planar NAND flash. The incorporation of Al or Gd in the HfO2 allows reaching higher k values as compared with pure HfO2 through different crystalline characteritics. However, a difficult compromise is to be found between the k value and low leakage due to grain boudaries in a material with large crystalline proportions. Hence, HfGdO reaches a k value as high as 23 but shows important leakage that translates into early program saturation and room temperature charge loss. The HfAlO has more moderate k of \sim16 but shows lower leakage leading to improved device performances. Finally, a three layer stack where a high-k HfAlO layer is encapsulated into Al2O3 thinner layers shows overall best compromise in terms of program/erase window and retention. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 35
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 93317369
- Full Text :
- https://doi.org/10.1109/LED.2013.2290053