600 V Diamond Junction Field-Effect Transistors Operated at 200^\circC.

Blocking characteristics of diamond junction field-effect transistors were evaluated at room temperature (RT) and 200^\circC. A high source-drain bias (breakdown voltage) of 566 V was recorded at RT, whereas it increased to 608 V at 200^\circC. The positive temperature coefficient of the breakdown voltage indicates the avalanche breakdown of the device. We found that the breakdown occurred at the drain edge of the p-n junction between p-channel and the n^+-gates. All four devices measured in this letter showed a maximum gate-drain bias over 500 V at RT and 600 V at 200^\circC. [ABSTRACT FROM PUBLISHER]