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Improvement in Properties of Window Layer of Sprayed CuInS2/In2S3 Solar Cell by Optimization of Tin Doping.
- Source :
- AIP Conference Proceedings; Jan2014, Vol. 1576, p76-78, 3p, 1 Chart, 2 Graphs
- Publication Year :
- 2014
-
Abstract
- Effect of diffusion of Tin in the window layer of CuInS<subscript>2</subscript>/In<subscript>2</subscript>S<subscript>3</subscript> heterojunction photovoltaic device fabricated using automated spray pyrolysis machine, is presented in this paper. Considerable improvement in the device parameters was observed through this process. The best device obtained in this study had open-circuit voltage of 370mV, short circuit current density of 5.33mA/cm², fill factor of 32% and efficiency of 0.65%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1576
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 94258134
- Full Text :
- https://doi.org/10.1063/1.4861986