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On the origin of cerium-related centres in lead-containing single crystalline films of Y2SiO5 : Ce and Lu2SiO5 : Ce.

Authors :
Kärner, T
Laguta, V V
Nikl, M
Shalapska, T
Zazubovich, S
Source :
Journal of Physics D: Applied Physics; 2/12/2014, Vol. 47 Issue 6, p065303-065309, 7p
Publication Year :
2014

Abstract

Absorption, electron spin resonance, and photo- and thermally stimulated luminescence characteristics are studied for single crystalline films (SCFs) of Y<subscript>2</subscript>SiO<subscript>5</subscript> : Ce and Lu<subscript>2</subscript>SiO<subscript>5</subscript> : Ce prepared by the liquid phase epitaxy method with the use of a PbO-containing flux. They are also compared with the characteristics of the corresponding single crystals (SCs) as well as of the undoped Y<subscript>2</subscript>SiO<subscript>5</subscript> and Lu<subscript>2</subscript>SiO<subscript>5</subscript> SCFs and SCs. The concentration of stable trivalent Ce<superscript>3+</superscript> ions in various SCFs with different lead and cerium contents is found to be negligible. It is suggested that stable tetravalent Ce<superscript>4+</superscript> ions mainly exist in the SCF due to a large concentration of Pb<superscript>2+</superscript> ions whose excess volume and negative charge can be effectively compensated by relatively small tetravalent Ce<superscript>4+</superscript> ions. Nevertheless, the characteristic Ce<superscript>3+</superscript> emission in the SCFs of Y<subscript>2</subscript>SiO<subscript>5</subscript> : Ce and Lu<subscript>2</subscript>SiO<subscript>5</subscript> : Ce does appear under photoexcitation in the charge-transfer absorption region (E<subscript>exc</subscript> > 4.2 eV), most probably as a result of the two-photon excitation process. Ce<superscript>3+</superscript> emission is observed under excitation by the ionizing radiation as well and is explained by the recombination of free electrons from the conduction band with Ce<superscript>4+</superscript> ions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
47
Issue :
6
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
94287706
Full Text :
https://doi.org/10.1088/0022-3727/47/6/065303