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The low-temperature sintering and microwave dielectric properties of (Zn0.7Mg0.3)TiO3 ceramics with H3BO3.
- Source :
- Chinese Physics B; Aug2013, Vol. 22 Issue 8, p087801-087804, 4p
- Publication Year :
- 2013
-
Abstract
- The effects of the addition of H<subscript>3</subscript>BO<subscript>3</subscript> on the microstructure, phase formation, and microwave dielectric properties of (Zn<subscript>0.7</subscript>Mg<subscript>0.3</subscript>)TiO<subscript>3</subscript> ceramics sintered at temperatures ranging from 890 °C to 950 °C are investigated. H<subscript>3</subscript>BO<subscript>3</subscript> as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 °C due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H<subscript>3</subscript>BO<subscript>3</subscript>. With the increase in H<subscript>3</subscript>BO<subscript>3</subscript> content, the dielectric constant (ε<subscript>r</subscript>) monotonically increases, but the quality factor (Q × f) reaches a maximum at 1 wt% H<subscript>3</subscript>BO<subscript>3</subscript>, and the apparent density of ZMT ceramics with H<subscript>3</subscript>BO<subscript>3</subscript> ≥ 1 wt% gradually decreases. At 950 °C, the ZMT ceramics with 1% H<subscript>3</subscript>BO<subscript>3</subscript> exhibit excellent microwave dielectric properties: ε<subscript>r</subscript> = 19.8, and Q × f = 43800 GHz (8.94 GHz). [ABSTRACT FROM AUTHOR]
- Subjects :
- MICROSTRUCTURE
DIELECTRIC materials
SINTERING
DIELECTRIC properties
DIELECTRICS
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 22
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 94287870
- Full Text :
- https://doi.org/10.1088/1674-1056/22/8/087801