High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions.

MLA

Liu, Zheng, et al. “High-Performance 4H-SiC Junction Barrier Schottky Diodes with Double Resistive Termination Extensions.” Chinese Physics B, vol. 22, no. 9, Sept. 2013, pp. 097302–07. EBSCOhost, https://doi.org/10.1088/1674-1056/22/9/097302.

APA

Liu, Z., Feng, Z., Sheng-Bei, L., Lin, D., Xing-Fang, L., Zhong-Chao, F., Bin, L., Guo-Guo, Y., Lei, W., Wan-Shun, Z., Guo-Sheng, S., Zhi, H., & Fu-Hua, Y. (2013). High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions. Chinese Physics B, 22(9), 097302–097307. https://doi.org/10.1088/1674-1056/22/9/097302

Chicago

Liu, Zheng, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, et al. 2013. “High-Performance 4H-SiC Junction Barrier Schottky Diodes with Double Resistive Termination Extensions.” Chinese Physics B 22 (9): 097302–7. doi:10.1088/1674-1056/22/9/097302.