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Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation.

Authors :
Yang, Rui
Terabe, Kazuya
Yao, Yiping
Tsuruoka, Tohru
Hasegawa, Tsuyoshi
Gimzewski, James K
Aono, Masakazu
Source :
Nanotechnology; 9/27/2013, Vol. 24 Issue 38, p384003-384011, 9p
Publication Year :
2013

Abstract

A compact neuromorphic nanodevice with inherent learning and memory properties emulating those of biological synapses is the key to developing artificial neural networks rivaling their biological counterparts. Experimental results showed that memorization with a wide time scale from volatile to permanent can be achieved in a WO<subscript>3−x</subscript>-based nanoionics device and can be precisely and cumulatively controlled by adjusting the device’s resistance state and input pulse parameters such as the amplitude, interval, and number. This control is analogous to biological synaptic plasticity including short-term plasticity, long-term potentiation, transition from short-term memory to long-term memory, forgetting processes for short- and long-term memory, learning speed, and learning history. A compact WO<subscript>3−x</subscript>-based nanoionics device with a simple stacked layer structure should thus be a promising candidate for use as an inorganic synapse in artificial neural networks due to its striking resemblance to the biological synapse. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574484
Volume :
24
Issue :
38
Database :
Complementary Index
Journal :
Nanotechnology
Publication Type :
Academic Journal
Accession number :
94291613
Full Text :
https://doi.org/10.1088/0957-4484/24/38/384003