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Electrical Characteristics of High Mobility Si/Si0.5Ge0.5/SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm.
- Source :
- Chinese Physics Letters; Oct2013, Vol. 30 Issue 10, p108502-108504, 3p
- Publication Year :
- 2013
-
Abstract
- Short-channel high-mobility Si/Si<subscript>0.5</subscript>Ge<subscript>0.5</subscript>/silicon-on-insulator (SOI) quantum-well p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated and electrically characterized. The transistors show good transfer and output characteristics with I<subscript>on</subscript>/I<subscript>off</subscript> ratio up to 10<superscript>5</superscript> and sub-threshold slope down to 100mV/dec. HfO<subscript>2</subscript>/TiN gate stack is employed and the equivalent oxide thickness of 1.1 nm is achieved. The effective hole mobility of the transistors reaches 200cm<superscript>2</superscript>/V·s, which is 2.12 times the Si universal hole mobility. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 30
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94296560
- Full Text :
- https://doi.org/10.1088/0256-307X/30/10/108502