Back to Search
Start Over
A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers.
- Source :
- Chinese Physics Letters; Dec2013, Vol. 30 Issue 12, p127102-127105, 4p
- Publication Year :
- 2013
-
Abstract
- A novel silicon-on-insulator (SOI) high-voltage device of super-junction (SJ) lateral-double-diffused metal-oxide-semiconductor transistors (LDMOSTs) with T-dual dielectric buried layers (T-DBLs) is presented. The T-DBLs are formed by the first T-shaped dielectric layer and the second dielectric layer. A lot of holes are accumulated on the top interface of the second dielectric layer, which compensates for the charge imbalance of the surface N and P pillars, thus the substrate-assisted depletion (SAD) effect is eliminated in the new device. The electric field of the second dielectric buried layer, E<subscript>12</subscript>, is enhanced by the interface charges, and the breakdown voltage V<subscript>breakdown</subscript> is increased. E<subscript>12</subscript> = 515 V/μm is obtained in the T-DBL SOI SJ. The V<subscript>breakdown</subscript> of the new device is increased from 124 V of the conventional SOI SJ to 302 V with a 15 μm length drift region. The specific on-resistance (R<subscript>on,sp</subscript>) of the T-DBL SOI SJ is only 0.00865 Ω·cm<superscript>2</superscript> and the FOM (FOM = V<superscript>2</superscript><subscript>breakdown</subscript>/R<subscript>on,sp</subscript>) is 10.54 MW/cm<superscript>2</superscript>. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 30
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94296650
- Full Text :
- https://doi.org/10.1088/0256-307X/30/12/127102