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Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications.
- Source :
- Applied Physics Letters; 2/17/2014, Vol. 104 Issue 7, p073115-1-073115-4, 4p, 1 Diagram, 3 Graphs
- Publication Year :
- 2014
-
Abstract
- High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R<subscript>C</subscript>) and access resistance (R<subscript>A</subscript>). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f<subscript>T</subscript>) after doping, as compared to ~23% f<subscript>T</subscript> improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R<subscript>C</subscript> on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R<subscript>A</subscript> for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94632558
- Full Text :
- https://doi.org/10.1063/1.4866332