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NOVEL HIGH VOLTAGE SILICON-ON-INSULATOR DEVICE WITH COMPOSITE DIELECTRIC BURIED LAYER.
- Source :
- Journal of Circuits, Systems & Computers; Dec2013, Vol. 22 Issue 10, p1-8, 8p
- Publication Year :
- 2013
-
Abstract
- A novel silicon-on-insulator (SOI) high voltage device with a composite dielectric buried layer (CD SOI) is proposed in this paper. In the proposed structure, the composite dielectric buried layer consists of SI<subscript>3</subscript>N<subscript>4</subscript> dielectric and low-A: (relative permittivity) dielectric. The electric field strength in the buried layer is enhanced by the low-k dielectric. The Si<subscript>3</subscript>N<subscript>4</subscript> dielectric in the buried layer not only modulates the electric field distribution in the drift region, but also provides a heat conduction path for the SOI layer and alleviates the self-heating effect (SHE). The breakdown voltage (BV) = 362 V for CD SOI is obtained by simulation on a 1 fim SOI layer over 2 jim buried layer, which is enhanced by 26% compared with that of conventional SOI. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02181266
- Volume :
- 22
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Circuits, Systems & Computers
- Publication Type :
- Academic Journal
- Accession number :
- 94647103
- Full Text :
- https://doi.org/10.1142/S021812661340029X