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A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.
- Source :
- IEEE Transactions on Electron Devices; Mar2014, Vol. 61 Issue 3, p762-768, 7p
- Publication Year :
- 2014
-
Abstract
- We experimentally demonstrate a high-voltage low-standby power startup circuit for powering up the off-line switched-mode power supply (SMPS) during the startup period by exploiting monolithically integrated enhancement/depletion-mode metal–insulator–semiconductor high electron mobility transistors (E/D-mode MIS-HEMTs) fabricated on a GaN-on-Si power device platform. The E/D-mode MIS-HEMTs exhibit a threshold voltage of +1.2 and -11~V, respectively. The high-voltage D-mode device used in the demonstration features an OFF-state breakdown voltage of 640 V and a safe operating area with a thermal limitation of 11.6 W/mm, whereas the low-voltage E-mode device features a source-gate breakdown voltage of 98 V, satisfying the requirement of the startup circuit. The functionality of the startup circuit is successfully achieved with an input voltage range 10–200 V and a startup current of 1.08 mA. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 94655874
- Full Text :
- https://doi.org/10.1109/TED.2014.2298459