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Motional Characteristics of Positively Charged Muonium Defects in In2O3.
- Source :
- AIP Conference Proceedings; 2014, Vol. 1583, p323-326, 4p, 2 Graphs
- Publication Year :
- 2014
-
Abstract
- We report on a study of the motional characteristics of positively charged muonium defect centers in In<subscript>2</subscript>O<subscript>3</subscript> powder. Zero field muon spin relaxation (ZF-MuSR) measurements were taken from 2 K to 950 K. Results show the positively charged muonium defects occupying two states (Mu<subscript>1</subscript> and Mu<subscript>2</subscript>) at low temperatures while a third state (Mu<subscript>3</subscript>) is introduced as the temperature is increased. Mu<subscript>1</subscript> is occupied more heavily than Mu<subscript>2</subscript> at low temperatures by a ratio of ~8:1. The Mu<subscript>1</subscript> state changes to the Mu<subscript>2</subscript> state starting at 300 K with site change energy of 0.46±0.11 eV and is essentially not occupied above 500 K. The Mu<subscript>2</subscript>state becomes diffusively mobile with a barrier of 0.78±0.07 eV at 350 K and begins trapping at Mu<subscript>3</subscript> at 400 K with a capture energy of 0.56±0.019 eV. A metastable region is observed between 500 K and 650 K in which the ratio between Mu<subscript>2</subscript> and Mu<subscript>3</subscript> amplitudes and the hop rate of Mu<subscript>2</subscript> are both roughly constant, implying a steady state trap and release balance between mobile Mu<subscript>2</subscript> centers and the Mu<subscript>3</subscript> trap state. Above 650 K, the muonium defects release from the Mu3 trap to the Mu<subscript>2</subscript> diffusive state with a dissociation energy of 0.901±0.003 eV. The upper limit on the high temperature diffusion barrier is determined, from the Mu<subscript>2</subscript> hop rate, to be 0.43±0.03 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1583
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 94697569
- Full Text :
- https://doi.org/10.1063/1.4865662