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Silicon heterojunction solar cell with passivated hole selective MoOx contact.
- Source :
- Applied Physics Letters; 3/17/2014, Vol. 104 Issue 11, p1-5, 5p, 1 Diagram, 1 Chart, 4 Graphs
- Publication Year :
- 2014
-
Abstract
- We explore substoichiometric molybdenum trioxide (MoO<subscript>x</subscript>, x<3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9mA/cm² in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 95066387
- Full Text :
- https://doi.org/10.1063/1.4868880