Cite
Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film.
MLA
Fan, Yang-Shun, and Po-Tsun Liu. “Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film.” IEEE Transactions on Electron Devices, vol. 61, no. 4, Apr. 2014, pp. 1071–76. EBSCOhost, https://doi.org/10.1109/TED.2014.2305155.
APA
Fan, Y.-S., & Liu, P.-T. (2014). Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film. IEEE Transactions on Electron Devices, 61(4), 1071–1076. https://doi.org/10.1109/TED.2014.2305155
Chicago
Fan, Yang-Shun, and Po-Tsun Liu. 2014. “Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film.” IEEE Transactions on Electron Devices 61 (4): 1071–76. doi:10.1109/TED.2014.2305155.